DocumentCode
2280433
Title
A high performance gate/base drive using a current source
Author
Stielau, O.H. ; Schoeman, J.J. ; van Wyk, J.D.
Author_Institution
Energy Lab., Rand Afrikaans Univ., Johannesburg, South Africa
fYear
1990
fDate
7-12 Oct. 1990
Firstpage
1637
Abstract
A gate drive that uses forced commutation to switch on the main device is described. The fundamental limits of the drive are pointed out, including minimum off-time and maximum on-time. The results of a loss analysis performed on the drive are presented. Experimental results show that the efficiency of the drive is exceptionally high when compared to conventional gate drives, and measured turned-on times of a zero turn-off thyristor are extremely low.<>
Keywords
semiconductor switches; current source; efficiency; forced commutation; gate/base drive; loss analysis; maximum on-time; minimum off-time; zero turn-off thyristor; Africa; Drives; Impedance; Inductance; Laboratories; MOSFET circuits; Semiconductor devices; Switches; Switching circuits; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Industry Applications Society Annual Meeting, 1990., Conference Record of the 1990 IEEE
Conference_Location
Seattle, WA, USA
Print_ISBN
0-87942-553-9
Type
conf
DOI
10.1109/IAS.1990.152406
Filename
152406
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