DocumentCode
2282153
Title
An Investigation of Abnormal Program Phenomena with S/D Junctions and Dopant Profiles for Sub-20 nm NAND Flash Memory Devices
Author
Park, Byoungjun ; Cho, Sunghoon ; Park, Jiyul ; Kim, Pyunghwa ; Lee, Sangjo ; Park, Milim ; Park, Min Sang ; Park, Sukkwang ; Yang, Hae Chang ; Park, Sungjo ; Lee, Yunbong ; Cho, Myoung Kwan ; Ahn, Kun-Ok ; Bae, Gihyun ; Park, Sungwook
Author_Institution
Flash Dev. Div., Hynix Semicond. Inc., Cheongju, South Korea
fYear
2012
fDate
20-23 May 2012
Firstpage
1
Lastpage
4
Abstract
In this paper, we discuss about the abnormal program phenomena of sub-20 nm NAND Flash memory devices based on floating gates. These phenomena are varied with the doping concentration and isolations. In sub-20 nm NAND technology, the optimized S/D junction and well-controlled dopant profiles under channel should be adopted to improve reliability characteristics.
Keywords
CMOS logic circuits; NAND circuits; doping profiles; flash memories; integrated circuit reliability; NAND flash memory devices; abnormal program phenomena; dopant profiles; doping concentration; floating gate; reliability characteristic; source-drain junctions; Boosting; Capacitance; Doping; Electric potential; Flash memory; Junctions; Nonvolatile memory;
fLanguage
English
Publisher
ieee
Conference_Titel
Memory Workshop (IMW), 2012 4th IEEE International
Conference_Location
Milan
Print_ISBN
978-1-4673-1079-6
Type
conf
DOI
10.1109/IMW.2012.6213622
Filename
6213622
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