A Dynamic Programming Method with Programming Current Clamped in Embedded P-Channel SONOS Flash Memory

A dynamic programming method of Channel Hot Hole Induced Hot Electron (CHHIHE) injection with programming-current-clamped (PCC) scheme on P-channel SONOS application is proposed in this paper. With the PCC scheme, a better programming efficiency and device reliability can be realized, and consequently up to 85% programming current reduction and over one order of retention lifetime improvement can be achieved. Moreover, it can also provide a tightened program state distribution with the benefit of lower programming power consumption, smaller high voltage pumping circuit area and better read sensing window.