Title :
Quantum resistance standards with double 2DEG
Author :
Bounouh, A. ; Poirier, W. ; Piquemal, F. ; Geneves, G. ; Andre, J.P.
Author_Institution :
BNM-LNE, Fontenay-aux-Roses, France
Abstract :
A new generation of quantum Hall array resistance standards (QHARS) designed from GaAs/AlGaAs heterostructures with double two-dimensional electron gases (2DEGs) has been developed. First results of measurements carried out on a single Hall bar (R/sub K//4) and 50 Hall bars placed in parallel by triple connections (R/sub K//200) are presented.
Keywords :
III-V semiconductors; aluminium compounds; electric resistance measurement; gallium arsenide; measurement standards; quantum Hall effect; semiconductor heterojunctions; two-dimensional electron gas; GaAs-AlGaAs; GaAs/AlGaAs heterostructures; QHARS; double 2DEG; double two-dimensional electron gases; parallel Hall bar measurements; quantum Hall array resistance standards; single Hall bar measurements; triple connections; Bars; Circuit synthesis; Electrical resistance measurement; Electrons; Gallium arsenide; Gases; Hall effect; Magnetic tunneling; Ohmic contacts; Standards development;
Conference_Titel :
Precision Electromagnetic Measurements, 2002. Conference Digest 2002 Conference on
Conference_Location :
Ottawa, Ontario, Canada
Print_ISBN :
0-7803-7242-5
DOI :
10.1109/CPEM.2002.1034811
