Electrical and Thermal Behavior of Tellurium Poor GeSbTe Compounds for Phase Change Memory

Author

Boniardi, Mattia ; Redaelli, Andrea ; Tortorelli, Innocenzo ; Lavizzari, Simone ; Pirovano, Agostino ; Pellizzer, Fabio ; Varesi, Enrico ; Erbetta, Davide ; Bresolin, Camillo ; Modelli, Alberto ; Bez, Roberto

Author_Institution

Process R&D, Micron Semicond. Italia s.r.l., Agrate Brianza, Italy

fYear

2012

fDate

20-23 May 2012

Firstpage

1

Lastpage

3

Abstract

The phase change active material exploration represents an important stage in order to further strengthen the know-how on the Phase Change Memory (PCM) technology. This work reports a path for PCM material exploration toward the tellurium poor region of the GeSbTe (GST) ternary compound system. Data retention enhancement is reported and associated to a factor 1.5 increase of the crystallization activation energy. A detailed description and discussion of the remarkable electrical and thermal parameters of the PCM cell as a function of GST composition is provided.

Keywords

antimony alloys; crystallisation; germanium alloys; phase change materials; phase change memories; tellurium alloys; GST composition; GeSbTe; PCM cell; PCM material exploration; PCM technology; crystallization activation energy; data retention enhancement; electrical behavior; electrical parameter; phase change active material exploration; phase change memory; tellurium poor alloy; tellurium poor region; thermal behavior; thermal parameter; Compounds; Metals; Phase change materials; Resistance; Temperature sensors; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Memory Workshop (IMW), 2012 4th IEEE International

Conference_Location

Milan

Print_ISBN

978-1-4673-1079-6

Type

conf

DOI

10.1109/IMW.2012.6213679

Filename

6213679