• DocumentCode
    2283221
  • Title

    Effect of Inserting Al2O3 Layer and Device Structure in HfO2-Based ReRAM for Low Power Operation

  • Author

    Wan Gee Kim ; Ja Yong Kim ; Ji Won Moon ; Moon Sig Joo ; Hye jung Choi ; Soo Gil Kim ; Kee Jeung Lee ; Kwon Hong ; Sung Ki Park

  • Author_Institution
    R&D Div., Hynix Semicond. Inc., Icheon, South Korea
  • fYear
    2012
  • fDate
    20-23 May 2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In this paper, the effect of tunnel barrier and device structure for the reliable and low power resistive switching operation was researched in the HfO2 based ReRAM system. From the experimental results, the Al2O3 thin layer as the tunnel barrier lowered the operation current and improved thermal stability for the stable switching operation. Moreover, the additional decrease of the operation current was achieved through the cell size drop with the stable cell structure.
  • Keywords
    alumina; low-power electronics; random-access storage; thermal stability; tunnelling; Al2O3; HfO2; ReRAM; alumin thin layer; cell size drop; device structure; low power operation; operation current; resistive switching operation; stable cell structure; stable switching operation; thermal stability; tunnel barrier; Aluminum oxide; Hafnium compounds; Materials; Reliability; Resistors; Switches; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Memory Workshop (IMW), 2012 4th IEEE International
  • Conference_Location
    Milan
  • Print_ISBN
    978-1-4673-1079-6
  • Type

    conf

  • DOI
    10.1109/IMW.2012.6213681
  • Filename
    6213681
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2283221