Effects of self-heating-induced negative output conductance in SOI circuits

Author

Fox, R.M. ; Brodsky, J.S.

Author_Institution

Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA

fYear

1993

fDate

5-7 Oct 1993

Firstpage

152

Lastpage

153

Abstract

Numerous authors have observed that self-heating can lead to negative output conductance in SOI MOSFETs. To date little consideration has been given to the effects of such behavior on circuit operation. This paper presents a first-order analysis of self-heating effects on circuits, and demonstrates through simulation and analysis that self-heating can cause even simple circuits to exhibit complicated nonlinear behavior. Heat-flow analysis shows that thermal resistances in contemporary SOI technologies are large enough that such effects are possible in practical circuits

Keywords

MOS integrated circuits; insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; silicon; simulation; thermal analysis; thermal resistance; SOI circuits; Si; circuit operation; first-order analysis; heat-flow analysis; self-heating effects; self-heating-induced negative output conductance; simulation; thermal resistances; Cause effect analysis; Circuit simulation; Hysteresis; Inverters; MOSFETs; Resistance heating; Semiconductor device modeling; Temperature sensors; Thermal resistance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1993. Proceedings., 1993 IEEE International

Conference_Location

Palm Springs, CA

Print_ISBN

0-7803-1346-1

Type

conf

DOI

10.1109/SOI.1993.344555

Filename

344555