A Single Photon Avalanche Diode Array Fabricated in Deep-Submicron CMOS Technology

Author

Niclass, Cristiano ; Sergio, Maximilian ; Charbon, Edoardo

Author_Institution

Ecole Polytechnique Federate de Lausanne

Volume

1

fYear

2006

fDate

6-10 March 2006

Firstpage

1

Lastpage

6

Abstract

We report the first fully integrated single photon avalanche diode array fabricated in 0.35 mum CMOS technology. At 25 mum, the pixel pitch achieved by this design is the smallest ever reported. Thanks to the level of miniaturization enabled by this design, we were able to build the largest single photon streak camera ever built in any technology, thus proving the scalability of the technology. Applications requiring low noise, high dynamic range, and/or picosecond timing accuracies are the prime candidates of this technology. Examples include bio-imaging at cellular and molecular level, fast optical imaging, single photon telecommunications, 3D cameras, optical rangefinders, LIDAR, and low light level imagers

Keywords

CMOS integrated circuits; avalanche photodiodes; integrated optoelectronics; 0.35 micron; 25 micron; 3D camera; LIDAR; cellular bio-imaging; deep-submicron CMOS technology; fast optical imaging; low light level imager; miniaturization; molecular level bio-imaging; optical rangefinder; picosecond timing accuracy; pixel pitch; single photon avalanche diode array; single photon streak camera; single photon telecommunication; Accuracy; CMOS technology; Cameras; Diodes; Dynamic range; Optical imaging; Optical noise; Photonics; Scalability; Timing;

fLanguage

English

Publisher

ieee

Conference_Titel

Design, Automation and Test in Europe, 2006. DATE '06. Proceedings

Conference_Location

Munich

Print_ISBN

3-9810801-1-4

Type

conf

DOI

10.1109/DATE.2006.243987

Filename

1656851