Title :
Analysis of color variation in bonded SOI wafers
Author :
Clapis, P.J. ; Ledger, A.M. ; Daniell, K.E.
Author_Institution :
Hughes Danbury Optical Syst. Inc., Danbury, CT, USA
Abstract :
In this paper, we analyze why SOI wafers appear as they do to the naked eye. We show how a thickness variation as small as ten Angstroms can cause a readily discernible color change, and why this optical effect is much stronger in a thinned SOI wafer than in an oxide-coated wafer or in thick SOI wafers
Keywords :
etching; polishing; semiconductor-insulator boundaries; silicon; wafer bonding; bonded SOI wafers; color shading; color variation; discernible color change; fringes; optical effect; oxide-coated wafer; thickness variation; thinned SOI wafer; wafer fabrication; Color; Optical device fabrication; Optical films; Optical sensors; Plasma devices; Plasma materials processing; Plasma properties; Reflectivity; Silicon; Wafer bonding;
Conference_Titel :
SOI Conference, 1993. Proceedings., 1993 IEEE International
Conference_Location :
Palm Springs, CA
Print_ISBN :
0-7803-1346-1
DOI :
10.1109/SOI.1993.344589
