Static and Dynamic Characterization of 6.5-kV 100-A SiC Bipolar PiN Diode Modules

Author

Elasser, Ahmed ; Agamy, Mohammed S. ; Nasadoski, Jeffrey ; Losee, Peter A. ; Bolotnikov, Alexander V. ; Stum, Zachary ; Raju, R. ; Stevanovic, Ljubisa ; Mari, Jorge ; Menzel, Michael ; Bastien, Bertrand

Author_Institution

Gen. Electr. Global Res. Center, Niskayuna, NY, USA

Volume

50

Issue

1

fYear

2014

fDate

Jan.-Feb. 2014

Firstpage

609

Lastpage

619

Abstract

High-voltage and high-current SiC bipolar diode modules are fabricated and characterized under static and dynamic conditions. The modules are built using 6 × 6 mm² SiC chips that are fabricated on 3-in SiC substrates. Individual chips were also packaged in an ISOPLUS™ package and used to perform switching tests on the diodes. The modules have been fully characterized under static and dynamic conditions. These modules are targeted for high-voltage high-frequency applications as well as antiparallel diodes for 6.5-kV insulated gate bipolar transistors, insulated gate commutated thyristors, and injection enhanced insulated gate bipolar transistors.

Keywords

insulated gate bipolar transistors; p-i-n diodes; semiconductor device manufacture; semiconductor device packaging; semiconductor device testing; silicon compounds; wide band gap semiconductors; ISOPLUS package; SiC; antiparallel diodes; bipolar PiN diode modules; current 100 A; injection enhanced insulated gate bipolar transistors; insulated gate commutated thyristors; size 3 in; switching tests; voltage 6.5 kV; Insulated gate bipolar transistors; Leakage currents; PIN photodiodes; Schottky diodes; Silicon; Silicon carbide; Switches; Bipolar degradation; PiN; bipolar diodes; current sharing; high voltage; silicon carbide;

fLanguage

English

Journal_Title

Industry Applications, IEEE Transactions on

Publisher

ieee

ISSN

0093-9994

Type

jour

DOI

10.1109/TIA.2013.2271741

Filename

6553092