DocumentCode
2284191
Title
Development of sub-100 µW microwave RTD VCOs
Author
Jeong, Yongsik ; Choi, Sunkyu ; Yang, Kyounghoon
Author_Institution
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol. (KAIST), Daejeon, South Korea
fYear
2010
fDate
17-20 Aug. 2010
Firstpage
214
Lastpage
216
Abstract
An extremely low dc power RTD VCO IC is demonstrated by utilizing a single-mode topology. The single-mode RTD VCO is implemented using a scaled down RTD with an emitter size of 0.7 × 0.7 μm2. The fabricated single-mode RTD VCO shows the extremely low dc power consumption of 59 μW in the core part at 12.2 GHz. To the authors´ best knowledge, the obtained core dc power consumption is the lowest reported up to date in the Ku band. In addition, the second harmonic balanced RTD VCO is also fabricated in the same MMIC technology to reduce the total dc power consumption based on a push-push principle. The fabricated second harmonic RTD VCO shows the total dc power consumption of sub-100 μW in the Ka band.
Keywords
MMIC oscillators; bipolar MMIC; harmonic generation; heterojunction bipolar transistors; low-power electronics; microwave bipolar transistors; microwave diodes; resonant tunnelling diodes; voltage-controlled oscillators; Ku band VCO; RTD-HBT MMIC technology; emitter size; frequency 12.2 GHz; low dc power RTD VCO IC; microwave RTD VCO; power 59 muW; push-push principle; resonant tunneling diode; scaled down RTD; second harmonic balanced RTD VCO; single-mode topology; size 0.7 mum; voltage controlled oscillator;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology (IEEE-NANO), 2010 10th IEEE Conference on
Conference_Location
Seoul
ISSN
1944-9399
Print_ISBN
978-1-4244-7033-4
Electronic_ISBN
1944-9399
Type
conf
DOI
10.1109/NANO.2010.5697742
Filename
5697742
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