Performance and characteristic analysis of double gate MOSFET over single gate MOSFET

In modern world, low power portable devices requires more devices to be integrated on a single chip since single gate MOSFET occupies large space due to its design construction, therefore in order to reduce the size of the device, to obtain high speed and reduction in cost we go for double gate MOSFET and analysis of characteristic parameters such as (drain current, capacitance, gate/control voltage, on-resistance, power or voltage gain, thickness of oxide layer and resistance of poly/gate are discussed.