DocumentCode
22849
Title
Solution-Based PbS Photodiodes, Integrable on ROIC, for SWIR Detector Applications
Author
Heves, Emre ; Ozturk, Cengizhan ; Ozguz, V. ; Gurbuz, Yasar
Author_Institution
Sabanci Univ. Nanotechnol. Res. & Applic. Center, Sabanci Univ., Istanbul, Turkey
Volume
34
Issue
5
fYear
2013
fDate
May-13
Firstpage
662
Lastpage
664
Abstract
Photodiodes, based on PbS colloidal quantum dots (CQD), are realized on both silicon substrates and the replicas of the read-out integrated circuits (ROICs) to demonstrate the first, fully integrated focal plane arrays. Careful optimization of PbS CQD film formation and ligand exchange process, together with optimized process steps, resulted in high performance, monolithically integrable photodiodes. High quantum efficiencies of 32% are achieved for photodiodes on Si substrates and high responsivities up to 5.73 A/W is achieved for photodiodes on ROIC replicas. These detectors achieved very high, normalized detectivities of 1.36 × 1011 Jones and 1.42 × 1012 Jones under 1 and 2-V reverse bias, respectively, that are close to conventional InGaAs short wave infrared detectors.
Keywords
elemental semiconductors; gallium compounds; indium compounds; lead compounds; photodiodes; semiconductor quantum dots; silicon; InGaAs; PbS; PbS CQD film formation; ROIC; SWIR detector; Si; colloidal quantum dots; fully integrated focal plane array; ligand exchange process; monolithically integrable photodiode; quantum efficiency; read-out integrated circuit; short wave infrared detector; silicon substrate; solution-based PbS photodiode; voltage 1 V; voltage 2 V; Colloidal quantum dots (CQD); infrared detectors; infrared image sensors; photodetector; photodiodes;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2013.2253756
Filename
6502656
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