DocumentCode :
22849
Title :
Solution-Based PbS Photodiodes, Integrable on ROIC, for SWIR Detector Applications
Author :
Heves, Emre ; Ozturk, Cengizhan ; Ozguz, V. ; Gurbuz, Yasar
Author_Institution :
Sabanci Univ. Nanotechnol. Res. & Applic. Center, Sabanci Univ., Istanbul, Turkey
Volume :
34
Issue :
5
fYear :
2013
fDate :
May-13
Firstpage :
662
Lastpage :
664
Abstract :
Photodiodes, based on PbS colloidal quantum dots (CQD), are realized on both silicon substrates and the replicas of the read-out integrated circuits (ROICs) to demonstrate the first, fully integrated focal plane arrays. Careful optimization of PbS CQD film formation and ligand exchange process, together with optimized process steps, resulted in high performance, monolithically integrable photodiodes. High quantum efficiencies of 32% are achieved for photodiodes on Si substrates and high responsivities up to 5.73 A/W is achieved for photodiodes on ROIC replicas. These detectors achieved very high, normalized detectivities of 1.36 × 1011 Jones and 1.42 × 1012 Jones under 1 and 2-V reverse bias, respectively, that are close to conventional InGaAs short wave infrared detectors.
Keywords :
elemental semiconductors; gallium compounds; indium compounds; lead compounds; photodiodes; semiconductor quantum dots; silicon; InGaAs; PbS; PbS CQD film formation; ROIC; SWIR detector; Si; colloidal quantum dots; fully integrated focal plane array; ligand exchange process; monolithically integrable photodiode; quantum efficiency; read-out integrated circuit; short wave infrared detector; silicon substrate; solution-based PbS photodiode; voltage 1 V; voltage 2 V; Colloidal quantum dots (CQD); infrared detectors; infrared image sensors; photodetector; photodiodes;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2013.2253756
Filename :
6502656
Link To Document :
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