• DocumentCode
    22849
  • Title

    Solution-Based PbS Photodiodes, Integrable on ROIC, for SWIR Detector Applications

  • Author

    Heves, Emre ; Ozturk, Cengizhan ; Ozguz, V. ; Gurbuz, Yasar

  • Author_Institution
    Sabanci Univ. Nanotechnol. Res. & Applic. Center, Sabanci Univ., Istanbul, Turkey
  • Volume
    34
  • Issue
    5
  • fYear
    2013
  • fDate
    May-13
  • Firstpage
    662
  • Lastpage
    664
  • Abstract
    Photodiodes, based on PbS colloidal quantum dots (CQD), are realized on both silicon substrates and the replicas of the read-out integrated circuits (ROICs) to demonstrate the first, fully integrated focal plane arrays. Careful optimization of PbS CQD film formation and ligand exchange process, together with optimized process steps, resulted in high performance, monolithically integrable photodiodes. High quantum efficiencies of 32% are achieved for photodiodes on Si substrates and high responsivities up to 5.73 A/W is achieved for photodiodes on ROIC replicas. These detectors achieved very high, normalized detectivities of 1.36 × 1011 Jones and 1.42 × 1012 Jones under 1 and 2-V reverse bias, respectively, that are close to conventional InGaAs short wave infrared detectors.
  • Keywords
    elemental semiconductors; gallium compounds; indium compounds; lead compounds; photodiodes; semiconductor quantum dots; silicon; InGaAs; PbS; PbS CQD film formation; ROIC; SWIR detector; Si; colloidal quantum dots; fully integrated focal plane array; ligand exchange process; monolithically integrable photodiode; quantum efficiency; read-out integrated circuit; short wave infrared detector; silicon substrate; solution-based PbS photodiode; voltage 1 V; voltage 2 V; Colloidal quantum dots (CQD); infrared detectors; infrared image sensors; photodetector; photodiodes;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2013.2253756
  • Filename
    6502656