DocumentCode :
2284972
Title :
Improved local refinement algorithms for adaptive meshing of process simulation problems
Author :
Law, M.E. ; Cerrato, M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA
fYear :
1997
fDate :
8-10 Sept. 1997
Firstpage :
233
Lastpage :
235
Abstract :
A new method for local grid refinement in unstructured meshes is presented. This technique uses an error estimator to guide the location of refinement, but then refines in a way to preserve or improve the grid quality. These algorithms are described and compared for sample test problems. A final example for an advanced isolation structure is also presented using the new algorithms.
Keywords :
isolation technology; mesh generation; semiconductor process modelling; adaptive meshing; error estimator; isolation structure; local grid refinement algorithm; process simulation; unstructured mesh; Computational modeling; Computer errors; Computer simulation; Degradation; Hysteresis; Smoothing methods; Sorting; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on
Conference_Location :
Cambridge, MA, USA
Print_ISBN :
0-7803-3775-1
Type :
conf
DOI :
10.1109/SISPAD.1997.621380
Filename :
621380
Link To Document :
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