Title :
Non-volatile memory using graphene oxide for flexible electronics
Author :
Hong, Seul Ki ; Kim, Ji-Eun ; Kim, Sang Ouk ; Cho, Byung Jin
Author_Institution :
Dept. of Electr. Eng., KAIST, Daejeon, South Korea
Abstract :
A non-volatile memory device using graphene oxide (GO) as a resistive switching element is demonstrated. It is found that the electrode materials and GO thickness is critical factors to determine the switching properties of devices. The Al/GO/ITO structure with 30 nm thick GO shows On/Off current ratio of 103. In addition, the GO memory device exhibits excellent performance when applied to flexible substrate, with good reliability and flexibility.
Keywords :
MIS structures; aluminium; carbon compounds; flexible electronics; indium compounds; random-access storage; semiconductor materials; semiconductor switches; tin compounds; Al-CO-ITO; On-Off current ratio; electrode materials; flexible electronics; flexible substrate; graphene oxide; nonvolatile memory; resistive switching element; size 30 nm;
Conference_Titel :
Nanotechnology (IEEE-NANO), 2010 10th IEEE Conference on
Conference_Location :
Seoul
Print_ISBN :
978-1-4244-7033-4
Electronic_ISBN :
1944-9399
DOI :
10.1109/NANO.2010.5697794
