DocumentCode
2285367
Title
A simplified hydrodynamic impact ionization model based on the average energy of hot electron subpopulation
Author
Ting-Wei Tang ; Joonwoo Nam
Author_Institution
Dept. of Electr. & Comput. Eng., Massachusetts Univ., Amherst, MA, USA
fYear
1997
fDate
8-10 Sept. 1997
Firstpage
269
Lastpage
272
Abstract
A simplified hydrodynamic model for impact ionization (II) is developed. The model is based on the average energy of hot electron subpopulation (HES) which is believed to be more relevant to the II than the average energy of total electron population (TEP). By solving this simplified HD model, II coefficient is calculated only as a function of the average energy of HES. The model is easily applicable to 2-D by exploiting the current flow line approach.
Keywords
hot carriers; impact ionisation; semiconductor device models; average energy; current flow line approach; hot electron subpopulation; hydrodynamic impact ionization model; impact ionization coefficient; model parameter extraction; Boltzmann equation; Boundary conditions; Computational modeling; Electronic mail; Electrons; High definition video; Hydrodynamics; Impact ionization; MOSFET circuits; Power engineering and energy;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on
Conference_Location
Cambridge, MA, USA
Print_ISBN
0-7803-3775-1
Type
conf
DOI
10.1109/SISPAD.1997.621389
Filename
621389
Link To Document