Breakdown characterisation of HEMTs and MESFETs based on a new thermally driven gate model

Author

Albasha, L. ; Snowden, C.M. ; Pollard, R.D.

Author_Institution

Inst. of Microwaves & Photonics, Leeds Univ., UK

fYear

1997

fDate

8-10 Sept. 1997

Firstpage

277

Lastpage

280

Abstract

This paper presents a physical model and experimental validation for the breakdown process in HEMTs and MESFETs. The model is integrated into a fast quasi-two-dimensional physical simulation. The model takes account of the tunnelling effects in the region of the gate metallization. A new thermal model monitors the channel temperature and controls the tunnelling mechanism. The effects of the substrate conduction on breakdown in HEMTs is highlighted. Experimental results are presented which confirm the physical interpretations of the numerical model.

Keywords

Schottky gate field effect transistors; electric breakdown; high electron mobility transistors; semiconductor device models; thermal analysis; tunnelling; HEMTs; MESFETs; breakdown characterisation; channel temperature; gate metallization region; numerical model; physical model; quasi-2D physical simulation; substrate conduction; thermally driven gate model; tunnelling effects; Avalanche breakdown; Electric breakdown; Electron mobility; Gate leakage; HEMTs; MESFETs; MODFETs; Substrates; Temperature; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on

Conference_Location

Cambridge, MA, USA

Print_ISBN

0-7803-3775-1

Type

conf

DOI

10.1109/SISPAD.1997.621391

Filename

621391