An inclusive study on characteristics of junctionless transistor

Author

Prashanth Kumar, B. ; Arif, Wasim ; Baishya, Srimanta

Author_Institution

Nat. Inst. of Technol. Silchar, Silchar, India

fYear

2014

fDate

13-14 Feb. 2014

Firstpage

1

Lastpage

5

Abstract

Junctionless transistor is a new type of device without any PN or N⁺N or P⁺P junction. These transistors are highly scalable. A clear study on the characteristics of junctionless FET compared with all single gate, double gate, triple gate and gate all around (GAA) transistors which are uniformly doped with different structures and body thickness. The I-V Characteristics which fluctuates with change in channel length and body thickness are analysed and investigated for n-type with the help of extensive device simulations for silicon substrate material. It also describes issues in ultra-small devices, such as doping fluctuation effects.

Keywords

field effect transistors; semiconductor device models; semiconductor doping; I-V characteristics; Si; body thickness; channel length; doping fluctuation effects; extensive device simulations; junctionless FET; junctionless transistor; silicon substrate material; ultra-small devices; uniform doping; Doping; Logic gates; Performance evaluation; Silicon; Threshold voltage; Transistors; Tunneling; Junctionless FET; band to band tunnelling (BTBT); gate all around; multi-gate transistor; short channel effects (SCE); single gate;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics and Communication Systems (ICECS), 2014 International Conference on

Conference_Location

Coimbatore

Print_ISBN

978-1-4799-2321-2

Type

conf

DOI

10.1109/ECS.2014.6892746

Filename

6892746