DocumentCode
2287494
Title
A novel RF vertical MOSFET for pulsed applications [UHF amplifier]
Author
Wilson, P.H.
Author_Institution
Fairchild Semicond., Discrete Power Technol., San Jose, CA, USA
Volume
1
fYear
2003
fDate
20-23 Sept. 2003
Firstpage
93
Abstract
This paper discusses the results of a high breakdown voltage vertical DMOS RF amplifier that employs power trench technology™ to achieve high pulse RF peak power. The RF device can achieve a power of 80 W at an operating voltage of 26 V and a 5% duty cycle.
Keywords
UHF field effect transistors; UHF power amplifiers; power MOSFET; pulse amplifiers; 26 V; 80 W; 900 MHz; RF vertical MOSFET; UHF amplifier; VDMOS; high breakdown voltage DMOS; high pulse RF peak power; pulse duty cycle; pulsed applications; Base stations; Costs; Linearity; MOSFET circuits; Manufacturing; Power amplifiers; Pulse amplifiers; Radio frequency; Radiofrequency amplifiers; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Optoelectronics Conference, 2003. IMOC 2003. Proceedings of the 2003 SBMO/IEEE MTT-S International
Print_ISBN
0-7803-7824-5
Type
conf
DOI
10.1109/IMOC.2003.1244837
Filename
1244837
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