Title :
Design and simulation of Schottky-Source/Drain GaN/AlGaN HEMTs for breakdown voltage improvement
Author :
George, Abin ; Nirmal, D. ; Prajoon, P. ; Mathew, Aldona
Author_Institution :
Dept. of Electron. & Commun. Eng., Karunya Univ., Coimbatore, India
Abstract :
ASchottky Source/Drain(SSD) technology was implemented for the off-state breakdown voltage improvement of GaN/AlGaN HEMTs and its various DC characteristics has been analyzed using SENTAURUS TCAD tools. The proposed GaN/AlGaN HEMT device with SSD technology provides an improvement in breakdown voltage of about 120V as compared to the conventional control GaN/AlGaN HEMTs. The improvement of the off state break down voltage, thus effectively suppresses the source carrier injection in the proposed device. The maximum drain current of the proposed device is found to be680mA/mm at a threshold voltage of a -1.5V. The OFF current of the device is obtained as 1.8e-10A/μm and thus the leakage current of the device is found to be reduced.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; aluminium compounds; electric breakdown; gallium compounds; high electron mobility transistors; leakage currents; wide band gap semiconductors; DC characteristics; GaN-AlGaN; Schottky drain HEMT; Schottky source HEMT; breakdown voltage improvement; leakage current; off state break down voltage; source carrier injection; voltage -1.5 V; Gallium nitride; Gold; HEMTs; Logic gates; MODFETs; Substrates; Breakdown Voltage; Heterojunction Field Effect Transistor; High Electron Mobility Transistors; Schottky Source/Drain;
Conference_Titel :
Electronics and Communication Systems (ICECS), 2014 International Conference on
Conference_Location :
Coimbatore
Print_ISBN :
978-1-4799-2321-2
DOI :
10.1109/ECS.2014.6892781
