Title :
SPECTRE Modeling for 45nm and Beyond
Author :
Chang-yong, Yin ; Bo, Hao
Author_Institution :
Shenyang Inst. of Eng., Shenyang
Abstract :
As the mainstream MOS technology is scaling into 45 nm and beyond sizes, the development of physical and predictive models for circuit simulation that cover geometry, bias, temperature ,DC,AC,RF, and noise characteristics becomes a major goal. This paper addressed the emerging physical effects in 45 nm node and the new generation BSIM4 model of SPECTRE is developed for 45 nm and beyond technology nodes.
Keywords :
CMOS integrated circuits; circuit simulation; BSIM4 model; SPECTRE modeling; circuit simulation; mainstream MOS technology; CMOS technology; Circuit simulation; Dielectric materials; Electrodes; Hafnium; High K dielectric materials; High-K gate dielectrics; Mathematical model; Semiconductor device modeling; Threshold voltage; BSIM4 model; degradation; simulation;
Conference_Titel :
Computer and Electrical Engineering, 2008. ICCEE 2008. International Conference on
Conference_Location :
Phuket
Print_ISBN :
978-0-7695-3504-3
DOI :
10.1109/ICCEE.2008.71
