Title :
Fast graphene-based electronics and optoelectronics
Author :
Avouris, Phaedon
Author_Institution :
IBM Res. Div., T.J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
We discuss the use of monolayer graphene as the channel of RF field-effect transistors (GFETs) and as the photoconductive element of photodetectors. GFETs with cut-off frequencies up to 100 GHz and wide wavelength range, ultrafast photodetectors are demonstrated. The electric field-induced bandgap opening in bilayer graphene is also demonstrated.
Keywords :
energy gap; field effect transistors; graphene; monolayers; optoelectronic devices; photodetectors; C; RF field-effect transistors; bilayer graphene; electric field-induced bandgap; fast graphene-based electronics; fast graphene-based optoelectronics; monolayer graphene; photodetector photoconductive element; ultrafast photodetectors;
Conference_Titel :
Nanotechnology (IEEE-NANO), 2010 10th IEEE Conference on
Conference_Location :
Seoul
Print_ISBN :
978-1-4244-7033-4
Electronic_ISBN :
1944-9399
DOI :
10.1109/NANO.2010.5698060
