PD-SOI MOSFETs: interface effect on point defects and doping profiles

Author

Bazizi, E.M. ; Pakfar, A. ; Fazzini, P.F. ; Cristiano, F. ; Tavernier, C. ; Claverie, A. ; Burenkov, A. ; Pichler, P.

Author_Institution

STMicroelectronics, Crolles, France

fYear

2009

fDate

5-8 Oct. 2009

Firstpage

1

Lastpage

2

Abstract

In this work, the influence of the Silicon/Buried Oxide interface (Si/BOX) on the electrical characteristics of silicon-on-insulator (SOI) MOSFETs is investigated by means of numerical simulations. Considering the State-of-Art dopant diffusion models and the recombining effect of Si/BOX interface on point defect, process simulations were performed to investigate the two-dimensional diffusion behaviour of the dopant impurities. The impact of the Si/BOX is investigated by analyzing the standard electrical characteristics of CMOS devices. Finally, a new electrical characterization methodology is detailed to better analyze dopants lateral diffusion profiles.

Keywords

CMOS integrated circuits; MOSFET; buried layers; diffusion; doping profiles; impurities; numerical analysis; point defects; semiconductor process modelling; silicon-on-insulator; CMOS devices; PD-SOI MOSFET; dopant diffusion models; dopant impurities; doping profiles; interface effect; lateral diffusion profiles; numerical simulations; point defects; process simulations; recombining effect; silicon-buried oxide interface; silicon-on-insulator; two-dimensional diffusion; Atomic measurements; Doping profiles; Electric variables; Electric variables measurement; MOS devices; MOSFETs; Semiconductor device modeling; Semiconductor process modeling; Silicon on insulator technology; Solid modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 2009 IEEE International

Conference_Location

Foster City, CA

ISSN

1078-621X

Print_ISBN

978-1-4244-4256-0

Electronic_ISBN

1078-621X

Type

conf

DOI

10.1109/SOI.2009.5318743

Filename

5318743