• DocumentCode
    2291265
  • Title

    Radiation effects in MIT Lincoln lab 3DIC technology

  • Author

    Gouker, P.M. ; Wyatt, P.W. ; Yost, D.-R. ; Chen, C.K. ; Knecht, J.M. ; Chen, C.L. ; Keast, C.L.

  • Author_Institution
    Lincoln Lab., Massachusetts Inst. of Technol., Lexington, MA, USA
  • fYear
    2009
  • fDate
    5-8 Oct. 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We characterized TID effects in MITLL 3DIC technology. We found that the effects were comparable for nFETs on the bottom tier with that on single tier wafers. Less positive charge build-up is observed for wide nFETs on the upper tiers, and this is due to the absence of silicon below the BOX. Other results indicate that MITLL 3DIC technology can be hardened to ionizing radiation by modifying the BOX.
  • Keywords
    field effect transistors; integrated circuit interconnections; radiation effects; MIT Lincoln lab 3DIC technology; n-field effect transistors; nFET; radiation effects; radiation ionization hardening; single tier wafers; Electron traps; FETs; Integrated circuit interconnections; Integrated circuit technology; Ionizing radiation; MOSFETs; Radiation effects; Silicon; Threshold voltage; Wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2009 IEEE International
  • Conference_Location
    Foster City, CA
  • ISSN
    1078-621X
  • Print_ISBN
    978-1-4244-4256-0
  • Electronic_ISBN
    1078-621X
  • Type

    conf

  • DOI
    10.1109/SOI.2009.5318752
  • Filename
    5318752
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2291265