• DocumentCode
    2291283
  • Title

    Results on aligned SiO2/SiO2 direct wafer-to-wafer low temperature bonding for 3D integration

  • Author

    Garnier, A. ; Angermayer, M. ; Di Cioccio, L. ; Gueguen, P. ; Wagenleitner, T.

  • Author_Institution
    CEA Leti, Grenoble, France
  • fYear
    2009
  • fDate
    5-8 Oct. 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    To meet future 3D stacking requirements on wafer-to-wafer level, we successfully demonstrate oxide-oxide direct bonding on 200 mm with and without copper level utilizing face-to-face alignment and bonding within one process module as well as on the same chuck.
  • Keywords
    copper; silicon compounds; wafer bonding; wafer-scale integration; 3D integration; 3D stacking; Cu; SiO2-SiO2; aligned direct wafer-wafer low temperature bonding; copper level; one process module; oxide-oxide direct bonding; size 200 mm; wafer alignement; Annealing; Cleaning; Copper; Plasma applications; Plasma chemistry; Plasma devices; Plasma temperature; Silicon; Stacking; Wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2009 IEEE International
  • Conference_Location
    Foster City, CA
  • ISSN
    1078-621X
  • Print_ISBN
    978-1-4244-4256-0
  • Electronic_ISBN
    1078-621X
  • Type

    conf

  • DOI
    10.1109/SOI.2009.5318753
  • Filename
    5318753
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2291283