Title :
Analysis of sense margin and reliability of 1T-DRAM fabricated on thin-film UTBOX substrates
Author :
Collaert, N. ; Aoulaiche, M. ; Rakowski, M. ; De Wachter, B. ; Bourdelle, K. ; Nguyen, B.Y. ; Boedt, F. ; Delprat, D. ; Jurczak, M.
Author_Institution :
IMEC, Heverlee, Belgium
Abstract :
In this work, we have investigated the impact of back bias on the behavior of UTBOX IT-DRAM. The back bias impacts the behavior of undoped and doped channels differently thereby leading to different optimization schemes. It was also shown that by careful optimization of the bias conditions for both "1" but also "0", the device degradation due to hot carrier stress can be reduced significantly.
Keywords :
DRAM chips; doping; hot carriers; integrated circuit reliability; optimisation; silicon-on-insulator; thin films; IT-DRAM fabrication; back bias impacts; bias conditions; device degradation; doped channel; hot carrier stress; optimization; reliability; sense margin analysis; silicon-on-insulator; thin-film UTBOX substrates; ultrathin buried oxide SOI devices; undoped channel; Charge carrier processes; Degradation; Electrons; Hot carriers; Impact ionization; Random access memory; Read-write memory; Stress; Substrates; Transistors;
Conference_Titel :
SOI Conference, 2009 IEEE International
Conference_Location :
Foster City, CA
Print_ISBN :
978-1-4244-4256-0
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2009.5318781
