Title :
Impact of FinFET technology on 6T-SRAM performance
Author :
O´uchi, S. ; Nakagawa, T. ; Matsukawa, T. ; Liu, Y.X. ; Endo, K. ; Sekigawa, T. ; Sakamoto, K. ; Koike, H. ; Masahara, M.
Author_Institution :
Nanoelectron. Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
Abstract :
The area penalty, operation stability, and operation speed of the 20-nm-ZG FinFET SRAM were compared to those of the 20-nm-ZG bulk-planar SRAM. The FinFET SRAM with beta-ratio of 1 is expected to realize not only 7% less area penalty, but also the same or superior operational stability to that of the bulk-planar SRAM with beta-ratio of 2 because of less variability of the device performance. Also, it is expected that the operation speed of the FinFET SRAM is twice faster than that of the bulk planar SRAM.
Keywords :
MOS integrated circuits; SRAM chips; 6T-SRAM array; FinFET SRAM; area penalty; bulk-planar SRAM; operation speed; operation stability; CMOS technology; Capacitance; Delay; FinFETs; Nanoelectronics; Random access memory; SPICE; Semiconductor device modeling; Stability; Transient analysis;
Conference_Titel :
SOI Conference, 2009 IEEE International
Conference_Location :
Foster City, CA
Print_ISBN :
978-1-4244-4256-0
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2009.5318783
