Title :
Design OFX-Band Solid State Power Amplifier
Author :
Lv, Bo ; Zhang, Xiao-Fa ; Yuan, Nai-Chang
Author_Institution :
Microwave Center, Nat. Univ. of Defense Technol., Changsha
Abstract :
In this paper, design theory for the X-band power amplifier is introduced firstly, and CAD method is used to design the bias circuit. Precautions In the installation of GaAs FET are given. Power supply protection circuit is designed to satisfy the turn-on and turn-off sequences. At the end test results are presented
Keywords :
field effect transistors; gallium arsenide; power amplifiers; power supply circuits; CAD method; GaAs FET; X-band solid state power amplifier; power supply protection circuit; Electrostatic discharge; Gallium arsenide; Impedance matching; Microwave FETs; Microwave amplifiers; Packaging; Power amplifiers; Protection; Solid state circuits; Transmitters; bias circuit; power amplifier; solid state circuit;
Conference_Titel :
Radar, 2006. CIE '06. International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-9582-4
Electronic_ISBN :
0-7803-9583-2
DOI :
10.1109/ICR.2006.343307
