DocumentCode
2293253
Title
Design OFX-Band Solid State Power Amplifier
Author
Lv, Bo ; Zhang, Xiao-Fa ; Yuan, Nai-Chang
Author_Institution
Microwave Center, Nat. Univ. of Defense Technol., Changsha
fYear
2006
fDate
16-19 Oct. 2006
Firstpage
1
Lastpage
3
Abstract
In this paper, design theory for the X-band power amplifier is introduced firstly, and CAD method is used to design the bias circuit. Precautions In the installation of GaAs FET are given. Power supply protection circuit is designed to satisfy the turn-on and turn-off sequences. At the end test results are presented
Keywords
field effect transistors; gallium arsenide; power amplifiers; power supply circuits; CAD method; GaAs FET; X-band solid state power amplifier; power supply protection circuit; Electrostatic discharge; Gallium arsenide; Impedance matching; Microwave FETs; Microwave amplifiers; Packaging; Power amplifiers; Protection; Solid state circuits; Transmitters; bias circuit; power amplifier; solid state circuit;
fLanguage
English
Publisher
ieee
Conference_Titel
Radar, 2006. CIE '06. International Conference on
Conference_Location
Shanghai
Print_ISBN
0-7803-9582-4
Electronic_ISBN
0-7803-9583-2
Type
conf
DOI
10.1109/ICR.2006.343307
Filename
4148413
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