DocumentCode
2296217
Title
The high speed ternary logic gates based on the multiple β transistors
Author
Shoujue, Wang ; Xunwei, WU ; Hongjuan, Feng
Author_Institution
Inst. of Semicond., Acad. Sinica, Beijing, China
fYear
1995
fDate
23-25 May 1995
Firstpage
178
Lastpage
181
Abstract
The paper develops a kind of multiple β transistor based on the multiple emitter transistor whose emitter has different current gain β. It then presents the design of the linear AND/OR gates and multi valued literal circuits. These two kinds of circuits have not only simple structures but also very high operating speeds so that they can be utilized to the design of the high speed multi valued logic circuits.
Keywords
logic gates; multivalued logic circuits; ternary logic; transistors; current gain; high speed multi valued logic circuits; high speed ternary logic gates; linear AND/OR gates; multi valued literal circuits; multiple β transistors; multiple emitter transistor; Bipolar transistor circuits; Boron; Circuit synthesis; Diodes; Equations; Logic design; Logic functions; Manufacturing; Multivalued logic; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Multiple-Valued Logic, 1995. Proceedings., 25th International Symposium on
ISSN
0195-623X
Print_ISBN
0-8186-7118-1
Type
conf
DOI
10.1109/ISMVL.1995.513528
Filename
513528
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