• DocumentCode
    2296217
  • Title

    The high speed ternary logic gates based on the multiple β transistors

  • Author

    Shoujue, Wang ; Xunwei, WU ; Hongjuan, Feng

  • Author_Institution
    Inst. of Semicond., Acad. Sinica, Beijing, China
  • fYear
    1995
  • fDate
    23-25 May 1995
  • Firstpage
    178
  • Lastpage
    181
  • Abstract
    The paper develops a kind of multiple β transistor based on the multiple emitter transistor whose emitter has different current gain β. It then presents the design of the linear AND/OR gates and multi valued literal circuits. These two kinds of circuits have not only simple structures but also very high operating speeds so that they can be utilized to the design of the high speed multi valued logic circuits.
  • Keywords
    logic gates; multivalued logic circuits; ternary logic; transistors; current gain; high speed multi valued logic circuits; high speed ternary logic gates; linear AND/OR gates; multi valued literal circuits; multiple β transistors; multiple emitter transistor; Bipolar transistor circuits; Boron; Circuit synthesis; Diodes; Equations; Logic design; Logic functions; Manufacturing; Multivalued logic; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Multiple-Valued Logic, 1995. Proceedings., 25th International Symposium on
  • ISSN
    0195-623X
  • Print_ISBN
    0-8186-7118-1
  • Type

    conf

  • DOI
    10.1109/ISMVL.1995.513528
  • Filename
    513528