Role of rare-earth elements in the design of radiation detectors and electroluminescent sources

Author

Grym, J. ; Prochazkova, O. ; Zavadil, J. ; Zdansky, K.

Author_Institution

Inst. of Photonics & Electron., Acad. of Sci. of the Czech Republic, Praha

fYear

2008

fDate

12-16 Oct. 2008

Firstpage

107

Lastpage

110

Abstract

Rare-earth (RE) elements present in the growth from the liquid phase have purifying effect on III-V semiconductors due to RE´s high affinity towards chemical species of shallow impurities. We demonstrate this purifying effect on the preparation of InP-based structures by liquid phase epitaxy with Pr admixture to the growth melt. We employ low temperature photoluminescence, capacitance-voltage and temperature dependent Hall effect measurements to show that optimized concentration of Pr admixture results in the growth of high purity layers of both conductivity types. We discuss the application of p-type InP layers in radiation detectors and InGaAsP layers in electroluminescent sources.

Keywords

Hall effect; III-V semiconductors; doping profiles; electroluminescent devices; gallium arsenide; indium compounds; liquid phase epitaxial growth; photoluminescence; praseodymium; radiation detection; semiconductor doping; Hall effect; InGaAsP:Pr; InP-based structures; InP:Pr; Pr; Pr admixture; affinity; capacitance-voltage measurement; conductivity; electroluminescent sources; liquid phase epitaxy; low temperature photoluminescence; purifying effect; radiation detectors; rare-earth elements; Capacitance-voltage characteristics; Chemical elements; Electroluminescence; Epitaxial growth; Hall effect; III-V semiconductor materials; Photoluminescence; Radiation detectors; Semiconductor impurities; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices and Microsystems, 2008. ASDAM 2008. International Conference on

Conference_Location

Smolenice

Print_ISBN

978-1-4244-2325-5

Electronic_ISBN

978-1-4244-2326-2

Type

conf

DOI

10.1109/ASDAM.2008.4743292

Filename

4743292