Reliability aspects of GaN-HEMTs on composite substrates

Author

Zanon, F. ; Danesin, F. ; Tazzoli, A. ; Meneghini, M. ; Ronchi, N. ; Chini, A. ; Bove, P. ; Langer, R. ; Zanoni, E. ; Meneghesso, G.

Author_Institution

Dept. of Inf. Eng., Univ. of Padova, Padova

fYear

2008

fDate

12-16 Oct. 2008

Firstpage

23

Lastpage

30

Abstract

This paper shows electrical characterizations and reliability analysis performed on AlGaN/GaN HEMTs processed on epitaxial layers grown on composite substrates. The results are very promising for the fabrication of low cost high power microwave transistors for wireless communication systems. The composite substrates constitute a valuable alternative to the silicon since better thermal properties are expected.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; microwave power transistors; power HEMT; radiocommunication; semiconductor device reliability; substrates; wide band gap semiconductors; AlGaN-GaN; HEMT; composite substrates; electrical characterizations; high power microwave transistor fabrication; reliability analysis; thermal properties; wireless communication system; Aluminum gallium nitride; Costs; Epitaxial layers; Fabrication; Gallium nitride; HEMTs; MODFETs; Performance analysis; Power system reliability; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices and Microsystems, 2008. ASDAM 2008. International Conference on

Conference_Location

Smolenice

Print_ISBN

978-1-4244-2325-5

Electronic_ISBN

978-1-4244-2326-2

Type

conf

DOI

10.1109/ASDAM.2008.4743324

Filename

4743324