PECVD Silicon Carbon Nitrid Thin Films: Properties

Author

Bohacek, P. ; Huran, J. ; Kobzev, A.P. ; Balalykin, N.I. ; Pezoltd, J.

Author_Institution

Inst. of Electr. Eng., Slovak Acad. of Sci., Bratislava

fYear

2008

fDate

12-16 Oct. 2008

Firstpage

291

Lastpage

294

Abstract

Silicon carbon nitride films were grown by the plasma enhanced chemical vapour deposition (PE CVD) technique. The concentration of species in the SiCN films was determined by Rutherford backscattering spectrometry (RBS). Chemical compositions were analyzed by infrared spectroscopy. The hydrogen concentration was determined by the elastic recoil detection (ERD) method. The electrical properties of SiCN films were determined by I-V measurement.

Keywords

Rutherford backscattering; plasma CVD; silicon compounds; spectrochemical analysis; thin films; PECVD; RBS; Rutherford backscattering spectrometry; SiCN; chemical compositions; elastic recoil detection; electrical properties; hydrogen concentration; infrared spectroscopy; plasma enhanced chemical vapour deposition; silicon carbon nitride; thin films; Backscatter; Chemical analysis; Chemical vapor deposition; Infrared spectra; Plasma chemistry; Plasma properties; Semiconductor films; Semiconductor thin films; Silicon; Spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices and Microsystems, 2008. ASDAM 2008. International Conference on

Conference_Location

Smolenice

Print_ISBN

978-1-4244-2325-5

Electronic_ISBN

978-1-4244-2326-2

Type

conf

DOI

10.1109/ASDAM.2008.4743340

Filename

4743340