Carrier Transport Improvement in Blue InGaN Light-Emitting Diodes Via Reduced Polarization Using a Band-Engineered Electron Blocking Layer

Author

Pei Sun ; Suihu Dang ; Tianbao Li ; Chunxia Li ; Hua Zhang ; Chengzhen Sun ; Bingshe Xu

Author_Institution

Dept. of Interface Sci. & Eng. in Adv. Mater., Taiyuan Univ. of Technol., Taiyuan, China

Volume

10

Issue

12

fYear

2014

fDate

Dec. 2014

Firstpage

1101

Lastpage

1105

Abstract

This study numerically investigates the effect of using a new electron blocking layer (EBL) for blue InGaN light-emitting diodes (LEDs) to improve hole injection efficiency and electron confinement. Simulation results suggest that the carrier transportation behavior of the EBL can be appropriately modified by adept control of the graded AlGaN layer. Furthermore, when compared with the conventional LED structure, the redesigned LED with graded AlGaN layer shows a slight improvement in forward voltage Vf and a significant enhancement in light output power. The redesigned LED can achieve an exceptional increment of 106.6% in light output power at 100 mA when compared with conventional LED. The observed improvement in the photoelectric performance of blue LEDs is primarily due to the reduced polarization effect at the last-barrier/EBL interface, as a result of the graded Al composition in EBL.

Keywords

aluminium compounds; indium compounds; light emitting diodes; numerical analysis; polarisation; wide band gap semiconductors; InGaN-AlGaN; LED; band-engineered electron blocking layer; blue light-emitting diode; carrier transport improvement; current 100 mA; electron confinement; hole injection efficiency; last-barrier-EBL interface; numerical investigation; reduced polarization effect; Aluminum gallium nitride; Charge carrier processes; Gallium nitride; Light emitting diodes; Materials; Power generation; Quantum well devices; Electron blocking layer (EBL); light-emitting diodes (LEDs); polarization effect;

fLanguage

English

Journal_Title

Display Technology, Journal of

Publisher

ieee

ISSN

1551-319X

Type

jour

DOI

10.1109/JDT.2014.2347033

Filename

6876122