Physical Modelling of a Step-Graded AlGaAs/GaAs Gunn Diode and Investigation of Hot Electron Injector Performance

Author

Amir, F. ; Farrington, N. ; Tauqeer, T. ; Missous, M.

Author_Institution

Microelectron. & Nanostruct. Group, Univ. of Manchester, Manchester

fYear

2008

fDate

12-16 Oct. 2008

Firstpage

51

Lastpage

54

Abstract

This paper presents continuing work on the development of a novel physical model for an advanced GaAs Gunn diode with hot-electron injection. The device itself is commercially manufactured by e2v Technologies (UK) Ltd. for use in 77 GHz automotive Adaptive Cruise Control (ACC) systems. A 2D model has been developed using SILVA CO. Simulated IV characteristics are presented and shown to match well with measured data over a range of temperatures. The relationship between doping spike carrier concentration in the injector and asymmetry in the device´s IV characteristic is then examined and compared to measured data.

Keywords

Gunn diodes; III-V semiconductors; aluminium compounds; carrier density; gallium arsenide; hot carriers; semiconductor device models; AlGaAs-GaAs; IV characteristics; SILVACO; doping spike carrier concentration; e2v technologies; hot electron injector; step-graded Gunn diode; Adaptive control; Automotive engineering; Control systems; Diodes; Gallium arsenide; Gunn devices; Manufacturing; Programmable control; Secondary generated hot electron injection; Semiconductor process modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices and Microsystems, 2008. ASDAM 2008. International Conference on

Conference_Location

Smolenice

Print_ISBN

978-1-4244-2325-5

Electronic_ISBN

978-1-4244-2326-2

Type

conf

DOI

10.1109/ASDAM.2008.4743356

Filename

4743356