Lasing and light amplification in photonic crystal heterostructures

Author

Ushakov, D.V. ; Kononenko, V.K.

Author_Institution

Belarussian State Univ., Minsk, Belarus

fYear

2003

fDate

19-20 Sept. 2003

Firstpage

158

Lastpage

161

Abstract

Properties of one-dimensional heterostructures having a photonic band gap in the near infrared range are examined and novel photonic crystals with n-i-p-i superlattices in the GaAs-Ga_xIn_1-xP system are designed. Performance characteristics of the photonic crystal heterostructures are calculated and effects of gain saturation in the active n-i-p-i layers are investigated. Light amplification at the transmission and reflection in the photonic band gap region is analyzed and peculiarities of the emission at the defect mode are established.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; infrared spectra; light reflection; optical multilayers; photonic band gap; photonic crystals; semiconductor lasers; semiconductor superlattices; GaAs-Ga_xIn_1-xP system design; GaAs-GaInP; defect mode; gain saturation; light amplification; n-i-p-i superlattices; near infrared range; photonic band gap; photonic crystal heterostructures; reflection; Doping; Electron optics; Optical reflection; Optical refraction; Optical saturation; Optical superlattices; Optical variables control; Photonic band gap; Photonic crystals; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Laser and Fiber-Optical Networks Modeling, 2003. Proceedings of LFNM 2003. 5th International Workshop on

Print_ISBN

0-7803-7709-5

Type

conf

DOI

10.1109/LFNM.2003.1246113

Filename

1246113