Mosaic placement of very high density 3D capacitors for efficient decoupling functionality in the RF domain

Author

Tesson, O. ; Le Cornec, F. ; Jacqueline, S.

Author_Institution

NXP Semicond., Caen, France

fYear

2009

fDate

7-9 June 2009

Firstpage

175

Lastpage

178

Abstract

In this paper, we present a layout driven approach used to fill empty space within MCM, with 3D high density decoupling capacitors. In a first time, a description of the innovative 3D unit cell is done based on process considerations. Then the method including the whole design flow is described and validated with the help of specific test cases and RF characterization data up to 6 GHz. A physical model is also proposed and implemented in the flow. The correlation between measurements and simulation data is found satisfactory and allows validating the proposed approach.

Keywords

capacitors; elemental semiconductors; integrated circuit layout; integrated circuit packaging; monolithic integrated circuits; multichip modules; radiofrequency integrated circuits; silicon; 3D unit cell; RF MCM; RF characterization; Si; decoupling functionality; empty space filling; layout driven method; mosaic placement; multichip modules; physical model; silicon embedded decoupling capacitors; very high density 3D capacitors; Electromagnetic interference; Inductance; MOS capacitors; Packaging; Power distribution; Radio frequency; Silicon; Space technology; Testing; White spaces; Capacitance measurements; Capacitors; Decoupling of systems; Modeling; Multichip modules;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium, 2009. RFIC 2009. IEEE

Conference_Location

Boston, MA

ISSN

1529-2517

Print_ISBN

978-1-4244-3377-3

Electronic_ISBN

1529-2517

Type

conf

DOI

10.1109/RFIC.2009.5135516

Filename

5135516