Fully integrated 23dBm transmit chain with on-chip power amplifier and balun for 802.11a application in standard 45nm CMOS process

Author

Kidwai, Adil A. ; Nazimov, Anna ; Eilat, Yishai ; Degani, Ofir

Author_Institution

Intel Corp., Hillsboro, OR, USA

fYear

2009

fDate

7-9 June 2009

Firstpage

273

Lastpage

276

Abstract

A fully integrated transmit chain for 802.11a band with on-chip power amplifier and on-chip balun matching network in 45 nm standard digital CMOS process demonstrates saturated power of +23 dBm. The average efficiency is +5% and peak efficiency is +15%. A standalone class AB CMOS power amplifier with on-chip balun matching network was also produced and detailed characterization data is presented. Using digital predistortion, an EVM of -28 dB is achieved at 19 dBm for 5 GHz band and 2.5 GHz band for standalone power amplifier.

Keywords

CMOS digital integrated circuits; MMIC power amplifiers; UHF integrated circuits; UHF power amplifiers; baluns; wireless LAN; 802.11a application; balun matching network; class AB digital CMOS power amplifier; efficiency 15 percent; efficiency 5 percent; frequency 2.5 GHz; frequency 5 GHz; integrated transmit chain; on-chip power amplifier; size 45 nm; CMOS process; Costs; Impedance matching; Inductors; Network-on-a-chip; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Transmitters; Wireless LAN; EVM; PAPD; Power amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium, 2009. RFIC 2009. IEEE

Conference_Location

Boston, MA

ISSN

1529-2517

Print_ISBN

978-1-4244-3377-3

Electronic_ISBN

1529-2517

Type

conf

DOI

10.1109/RFIC.2009.5135538

Filename

5135538