A 50-dB image-rejection SiGe-HBT based low noise amplifier in 24-GHz band

Author

Masuda, Toru ; Shiramizu, Nobuhiro ; Nakamura, Takahiro ; Washio, Katsuyoshi

Author_Institution

Central Res. Lab., Hitachi, Kokubunji, Japan

fYear

2009

fDate

7-9 June 2009

Firstpage

307

Lastpage

310

Abstract

An image-rejection low-noise amplifier (LNA) based on 0.18-mum SiGe BiCMOS technology was developed in order to create a 24 GHz-band RF receiver front-end. Its high image-rejection ratio (IRR) in the quasi-millimeter-wave frequency region is due to the use of a notch feedback circuit. The LNA has a 14-dB gain at an operating frequency of 27.2 GHz and an IRR greater than 50 dB IRR at an image frequency of 21.6 GHz. While its IIP3 is -14 dBm, its power consumption with a 1.2-V power supply is also low, 7.9 mW.

Keywords

BiCMOS integrated circuits; circuit feedback; heterojunction bipolar transistors; low noise amplifiers; radio receivers; RF receiver; SiGe BiCMOS technology; frequency 21.6 GHz; frequency 24 GHz; frequency 27.2 GHz; image rejection SiGe-HBT; image-rejection low-noise amplifier; low noise amplifier; notch feedback circuit; power 7.9 mW; quasimillimeter-wave frequency region; size 0.18 mum; voltage 1.2 V; BiCMOS integrated circuits; Circuit noise; Energy consumption; Feedback circuits; Germanium silicon alloys; Low-noise amplifiers; Power supplies; Radio frequency; Radiofrequency amplifiers; Silicon germanium; SiGe HBT; image rejection; low noise amplifier; notch filter;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium, 2009. RFIC 2009. IEEE

Conference_Location

Boston, MA

ISSN

1529-2517

Print_ISBN

978-1-4244-3377-3

Electronic_ISBN

1529-2517

Type

conf

DOI

10.1109/RFIC.2009.5135546

Filename

5135546