DocumentCode
2299591
Title
Recent results on long-wavelength VCSELs: Device structures, performance and applications
Author
Gruendl, T. ; Mueller, M. ; Grasse, C. ; Vizbaras, K. ; Amann, M. -C
Author_Institution
Walter Schottky Inst., Tech. Univ. Munchen, Garching, Germany
fYear
2012
fDate
23-27 Sept. 2012
Firstpage
112
Lastpage
113
Abstract
We are presenting an overview of InP and GaSb based VCSEL devices in the long-wavelength range. Device structures and performances regarding high-power, tunability and high-speed are discussed by focusing on telecommunication, safety and medical applications.
Keywords
III-V semiconductors; gallium compounds; indium compounds; laser tuning; surface emitting lasers; GaSb; InP; device structures; laser tunability; long wavelength VCSEL; vertical cavity surface emitting lasers; Distributed Bragg reflectors; Gas lasers; Indium phosphide; Micromechanical devices; Tuning; Vertical cavity surface emitting lasers; FBG; High-Power; High-Speed; InP; MEMS; TDLAS; Telecommunication; Tunable; VCSEL;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Conference (IPC), 2012 IEEE
Conference_Location
Burlingame, CA
Print_ISBN
978-1-4577-0731-5
Type
conf
DOI
10.1109/IPCon.2012.6358514
Filename
6358514
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