DocumentCode :
2300309
Title :
A comparison of bulk and quantum dot GaAs solar cells
Author :
Li, Tian ; Amirloo, J. ; Murray, J. ; Sablon, K.A. ; Little, J. ; Uppal, P. ; Munday, J. ; Dagenais, Mario
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Maryland, College Park, MD, USA
fYear :
2012
fDate :
23-27 Sept. 2012
Firstpage :
194
Lastpage :
195
Abstract :
We report on the realization of a GaAs type-I quantum dot solar cell with a record 29.9 mA/cm2 short circuit current density and we compare it to a reference bulk GaAs solar cell.
Keywords :
III-V semiconductors; current density; gallium arsenide; semiconductor quantum dots; solar cells; GaAs; reference bulk solar cell; short circuit current density; type-I quantum dot solar cell; Coatings; Educational institutions; Gallium arsenide; Gold; Photovoltaic cells; Quantum computing; Quantum dots;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photonics Conference (IPC), 2012 IEEE
Conference_Location :
Burlingame, CA
Print_ISBN :
978-1-4577-0731-5
Type :
conf
DOI :
10.1109/IPCon.2012.6358557
Filename :
6358557
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2300309
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