Tests on Symmetry and Continuity between BSIM4 and BSIM5

Author

Niu, Xudong ; Song, Yan ; Li, Bo ; Bian, Wei ; Tao, Yadong ; Liu, Feng ; Hu, Jinhua ; Chen, Yu ; He, Frank

Author_Institution

Sch. of Comput. & Inf. Eng., Peking Univ., Shenzhen

fYear

2007

fDate

26-28 March 2007

Firstpage

263

Lastpage

268

Abstract

This paper presents the test results on the CMOS model symmetry and continuity characteristics between BSIM4 and BSIM5 from University of California at Berkeley. It is shown that the industry standard model BSIM4 has a series of the shortcomings of the continuity and symmetry, such as the charge, high-order current derivatives, and the trans-capacitances while new generation BSIM MOSFET compact model, BSIM5, demonstrates all necessary continuity and symmetry characteristics, which are very important for analog and RF circuit design

Keywords

BSI standards; CMOS analogue integrated circuits; MOSFET; integrated circuit modelling; semiconductor device models; BSIM MOSFET compact model; BSIM4; BSIM5; Berkeley; CMOS model symmetry; RF circuit design; University of California; analog circuit design; industry standard model; Analog circuits; Circuit simulation; Circuit synthesis; Circuit testing; Electronics industry; Equations; MOSFET circuits; Physics; Radio frequency; Semiconductor device modeling; BSIM4; BSIM5; CMOS circuit design; compact model; continuity; symmetry.;

fLanguage

English

Publisher

ieee

Conference_Titel

Quality Electronic Design, 2007. ISQED '07. 8th International Symposium on

Conference_Location

San Jose, CA

Print_ISBN

0-7695-2795-7

Type

conf

DOI

10.1109/ISQED.2007.157

Filename

4149045