Title :
Programmable High Speed Multi-Level Simultaneous Bidirectional I/O
Author :
Kim, Yong Sin ; Kang, Sung-Mo
Author_Institution :
Dept. of Electr. Eng., California Univ., Santa Cruz, CA
Abstract :
This paper describes a programmable high speed multi-level simultaneous bidirectional I/O. With programmable high speed differential current switching, the static current flow becomes dependent upon the number of bits in the outgoing data, from 0-bit to 2-bit. The pre-emphasis method was implemented to enhance the transmission speed. Simulation results based on 0.18mum CMOS process show the maximum data rate can be enhanced to 4.8Gb/s/pin. Timing window and voltage window are 480ps and 43mV, respectively
Keywords :
CMOS integrated circuits; high-speed integrated circuits; programmable circuits; 0.18 micron; 43 mV; 480 ps; CMOS process; programmable high speed differential current switching; simultaneous bidirectional I/O; static current; timing window; voltage window; Circuits; Decoding; Energy consumption; Frequency; Impedance matching; Noise reduction; Timing; Transmission lines; Voltage; Wire;
Conference_Titel :
Quality Electronic Design, 2007. ISQED '07. 8th International Symposium on
Conference_Location :
San Jose, CA
Print_ISBN :
0-7695-2795-7
DOI :
10.1109/ISQED.2007.128
