Title :
A high-density logic CMOS process compatible non-volatile memory for sub-28nm technologies
Author :
Shen, Rick Shih-Jye ; Meng-Yi Wu ; Hsin-Ming Chen ; Lu, Chris Chun-Hung
Author_Institution :
eMemory Technol. Inc., JhuBei, Taiwan
Abstract :
Various product applications bring up with increasing demands of logic NVM IP in advanced technology nodes. Encryption, security, functionality, and identification setting become indispensable in communication and high-end consumer electronics. A non-volatile memory cell, using anti-fuse programming mechanism to achieve high density and excellent data storage lifetime, is proposed. The unique cell design and operation scheme realize low programming-inhibit leakage current, fast program speed, and robust data retention. The memory macro is successfully demonstrated for one-time and multi-time programming applications with its full compatibility to sub-28nm and FinFET processes.
Keywords :
CMOS memory circuits; MOSFET; consumer electronics; leakage currents; random-access storage; FinFET process; OTP; antifuse programming mechanism; cell design; consumer electronics; data storage lifetime; high-density logic CMOS process; logic NVM IP; low programming-inhibit leakage current; nonvolatile memory cell; one-time programming; robust data retention; size 28 nm; Computer architecture; IP networks; Junctions; Logic gates; Microprocessors; Nonvolatile memory; Transistors;
Conference_Titel :
VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4799-3331-0
DOI :
10.1109/VLSIT.2014.6894353
