Embedded STT-MRAM for energy-efficient and cost-effective mobile systems

Author

Kang, S.H.

Author_Institution

Adv. Memory Technol., Qualcomm Technol. Inc., San Diego, CA, USA

fYear

2014

fDate

9-12 June 2014

Firstpage

1

Lastpage

2

Abstract

STT-MRAM is a logic-friendly nonvolatile memory that can realize a combination of high speed, low energy, and high endurance. Embedded STT-MRAM is positioned attractively not only for emerging low standby-power connectivity systems such as wearables, IOT (Internet-of-Things), and secure elements, but also for high-performance mobile SOC as an embedded nonvolatile working memory. With recent breakthroughs in CoFeB-based perpendicular magnetic tunnel junctions (MTJ), embedded STT-MRAM has become more energy-efficient and cost-effective in conjunction with robust data retention, scalable for advanced logic nodes.

Keywords

Internet of Things; MRAM devices; cobalt compounds; iron compounds; low-power electronics; magnetic tunnelling; system-on-chip; CoFeB; CoFeB-based perpendicular magnetic tunnel junctions; IOT; Internet-of-Things; MTJ; advanced logic nodes; cost-effective mobile systems; embedded STT-MRAM; embedded nonvolatile working memory; energy-efficient mobile systems; high-performance mobile SOC; logic-friendly nonvolatile memory; low standby-power connectivity systems; robust data retention; Energy efficiency; Magnetic tunneling; Mobile communication; Nonvolatile memory; Reliability; Switches; System-on-chip;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014 Symposium on

Conference_Location

Honolulu, HI

ISSN

0743-1562

Print_ISBN

978-1-4799-3331-0

Type

conf

DOI

10.1109/VLSIT.2014.6894354

Filename

6894354