Simple Gate Metal Anneal (SIGMA) stack for FinFET Replacement Metal Gate toward 14nm and beyond

Author

Ando, Takehiro ; Kannan, B. ; Kwon, Uihui ; Lai, W.L. ; Linder, B.P. ; Cartier, E.A. ; Haight, Richard ; Copel, M. ; Bruley, J. ; Krishnan, S.A. ; Narayanan, Vijaykrishnan

Author_Institution

IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA

fYear

2014

fDate

9-12 June 2014

Firstpage

1

Lastpage

2

Abstract

We demonstrate a Simple Gate Metal Anneal (SIGMA) stack for FinFET Replacement Metal Gate (RMG) technology, which uses only thin TiN layers as workfunction (WF)-setting metals for CMOS integration. The SIGMA stack provides 100× PBTI lifetime improvement via band alignment engineering. Moreover, the SIGMA stack enables 9nm more gate length (L_g) scaling compared to the conventional stack with matched gate resistance and thus opens up pathways for aggressive L_g scaling toward the 14nm node and beyond.

Keywords

CMOS integrated circuits; MOSFET; scaling circuits; titanium compounds; work function; CMOS integration; FinFET replacement metal gate; PBTI lifetime improvement; RMG technology; SIGMA stack; WF-setting metals; band alignment engineering; gate length scaling; matched gate resistance; simple gate metal anneal stack; size 14 nm; size 9 nm; thin layers; workfunction-setting metals; Annealing; CMOS integrated circuits; FinFETs; Logic gates; Resistance; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014 Symposium on

Conference_Location

Honolulu, HI

ISSN

0743-1562

Print_ISBN

978-1-4799-3331-0

Type

conf

DOI

10.1109/VLSIT.2014.6894358

Filename

6894358