III-Nitride Optoelectronic Devices: From ultraviolet detectors and visible emitters towards terahertz intersubband devices

Author

Razeghi, M. ; Bayram, C. ; Vashaei, Z. ; Cicek, E. ; McClintock, R.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Northwestern Univ., Evanston, IL, USA

fYear

2010

fDate

7-11 Nov. 2010

Firstpage

351

Lastpage

352

Abstract

III-nitride optoelectronic devices are discussed. Ultraviolet detectors and visible emitters towards terahertz intersubband devices are reported. Demonstration of single photon detection efficiencies of 33% in the ultraviolet regime, intersubband energy levels as low as in the mid-infrared regime, and GaN-based resonant tunneling diodes with negative resistance of 67 Ω are demonstrated.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; infrared detectors; integrated optoelectronics; microwave photonics; photodetectors; resonant tunnelling diodes; terahertz wave detectors; ultraviolet detectors; wide band gap semiconductors; AlGaInN; GaN; Ill-nitride optoelectronic devices; efficiency 33 percent; energy levels; midinfrared detection; negative resistance; resonant tunneling diodes; single photon detection; terahertz intersubband devices; ultraviolet detectors; visible emitters;

fLanguage

English

Publisher

ieee

Conference_Titel

IEEE Photonics Society, 2010 23rd Annual Meeting of the

Conference_Location

Denver, CO

ISSN

-

Print_ISBN

978-1-4244-5368-9

Electronic_ISBN

-

Type

conf

DOI

10.1109/PHOTONICS.2010.5698904

Filename

5698904