• DocumentCode
    230376
  • Title

    A copper ReRAM cell for Storage Class Memory applications

  • Author

    Sills, Scott ; Yasuda, Shuhei ; Strand, Jonathan ; Calderoni, Alessandro ; Aratani, Katsuhisa ; Johnson, A. ; Ramaswamy, Nirmal

  • Author_Institution
    Micron Technol. Inc., Boise, ID, USA
  • fYear
    2014
  • fDate
    9-12 June 2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Hybrid memory systems that incorporate Storage Class Memory (SCM) as non-volatile cache or DRAM data backup are expected to bolster system efficiency and cost because SCM promises higher density than DRAM cache and higher speed than the storage I/F. This paper demonstrates a Cu-based resistive random access memory (ReRAM) cell that meets the SCM performance specifications for a 16Gb ReRAM with 200MB/s write and 1GB/s read [1].
  • Keywords
    DRAM chips; cache storage; copper; Cu; DRAM data backup; SCM; bolster system efficiency; copper ReRAM cell; hybrid memory systems; nonvolatile cache; resistive random access memory; storage capacity 16 Gbit; storage class memory applications; Bit error rate; Bridge circuits; Materials; Noise; Random access memory; Resistance; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014 Symposium on
  • Conference_Location
    Honolulu, HI
  • ISSN
    0743-1562
  • Print_ISBN
    978-1-4799-3331-0
  • Type

    conf

  • DOI
    10.1109/VLSIT.2014.6894368
  • Filename
    6894368
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=230376