Time-dependent variation: A new defect-based prediction methodology

Author

Duan, M. ; Zhang, Jian F. ; Ji, Zhen ; Zhang, Wensheng ; Kaczer, Ben ; Schram, T. ; Ritzenthaler, R. ; Thean, A. ; Groeseneken, Guido ; Asenov, Asen

Author_Institution

Sch. of Eng., Liverpool John Moores Univ., Liverpool, UK

fYear

2014

fDate

9-12 June 2014

Firstpage

1

Lastpage

2

Abstract

For the first time, different impacts of as-grown and generated defects on nm-sized devices are demonstrated. As-grown hole traps are responsible for WDF, which increases with Vg_op and tw. The generated defects are substantial, but do not contribute to WDF and consequently are not detected by RTN. The non-discharging component follows the same model as that for large devices: the `AG´ model. Based on this defect framework, a new methodology is proposed for test engineers to predict the long term TDV and yield and its prediction-capability is verified.

Keywords

MOSFET; crystal defects; hole traps; semiconductor device reliability; as-grown defect; defect based prediction methodology; generated defect; hole traps; nanometer sized device; nondischarging component; time dependent variation; within-a-device fluctuation; Discharges (electric); Educational institutions; Predictive models; Random access memory; Stress; Temperature measurement; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014 Symposium on

Conference_Location

Honolulu, HI

ISSN

0743-1562

Print_ISBN

978-1-4799-3331-0

Type

conf

DOI

10.1109/VLSIT.2014.6894373

Filename

6894373