Undoped Ge0.92Sn0.08 quantum well PMOSFETs on (001), (011) and (111) substrates with in situ Si2H6 passivation: High hole mobility and dependence of performance on orientation

Author

Mingshan Liu ; Genquan Han ; Yan Liu ; Chunfu Zhang ; Hongjuan Wang ; Xiangdong Li ; Jincheng Zhang ; Buwen Cheng ; Yue Hao

Author_Institution

Wide Bandgap Semicond. Technol. Disciplines State Key Lab., Xidian Univ., Xi´an, China

fYear

2014

fDate

9-12 June 2014

Firstpage

1

Lastpage

2

Abstract

We demonstrate high performance undoped Ge_0.92Sn_0.08 quantum well (QW) pMOSFETs with in situ Si₂H₆ passivation on (001), (011) and (111) orientations. (011) and (111)-oriented Ge_0.92Sn_0.08 QW pFETs achieve higher on-state current ION and effective hole mobility μ_eff compared to (001) devices. Ge_0.92Sn_0.08 (111) QW pFETs demonstrate a record high μ_eff of 845 cm²V^-1s^-1 for GeSn p-channel devices (Fig. 1). This is enabled by incorporating high biaxial compressive strain (1.43%) and eliminating dopant impurity scattering in the defect-free GeSn channel.

Keywords

MOSFET; field effect transistors; germanium compounds; passivation; quantum well devices; silicon compounds; Ge_0.92Sn_0.08; Si₂H₆; biaxial compressive strain; dopant impurity scattering; effective hole mobility; high hole mobility; on-state current; p-channel devices; pFET; passivation; quantum well PMOSFET; Hafnium compounds; Logic gates; MOSFET; Passivation; Silicon; Strain; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014 Symposium on

Conference_Location

Honolulu, HI

ISSN

0743-1562

Print_ISBN

978-1-4799-3331-0

Type

conf

DOI

10.1109/VLSIT.2014.6894376

Filename

6894376