Title :
Low dark current Ge PIN photodiode for a high-performance, photonic BiCMOS process for radio-over-fiber applications
Author :
Lischke, S. ; Knoll, D. ; Zimmermann, L. ; Yamamoto, Y. ; Fraschke, M. ; Trusch, A. ; Krüger, A. ; Kroh, M. ; Tillack, B.
Author_Institution :
IHP, Frankfurt (Oder), Germany
Abstract :
A waveguide coupled Ge PIN photodiode showing 0.7A/W responsivity and 13GHz optical bandwidth at a low dark current of 12mA/cm2 is presented. Its unique features facilitate integration in a high-performance, photonic BiCMOS process.
Keywords :
BiCMOS integrated circuits; elemental semiconductors; germanium; integrated optoelectronics; optical waveguides; p-i-n photodiodes; photodetectors; Ge; bandwidth 13 GHz; high-performance photonic BiCMOS process; low dark current Ge PIN photodiode; optical bandwidth; radio-over-fiber applications; waveguide coupled Ge PIN photodiode; BiCMOS integrated circuits; Dark current; Fabrication; Optical waveguides; Photodiodes; Photonics; Silicon; BiCMOS; Ge photodiode;
Conference_Titel :
Photonics Conference (IPC), 2012 IEEE
Conference_Location :
Burlingame, CA
Print_ISBN :
978-1-4577-0731-5
DOI :
10.1109/IPCon.2012.6358778
